DocumentCode
1028829
Title
The selection of GaAs epitaxial layers for CW X-band Gunn diodes
Author
Hilsum, Cyril ; Morgan, John R.
Author_Institution
Royal Research Establishment, Malvern, Worcester, England
Volume
14
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
532
Lastpage
534
Abstract
Results are reported on 1000 diodes made from about 50 GaAs epitaxial layers. The layers are classified for quality according to the power output of the average device, and the correlation between quality and epitaxial layer thickness 
and resistivity ρ are examined. It is shown that the quality cannot be linked to the thickness or resistivity alone, but is closely connected with the ratio of thickness to resistivity. Ninety-five percent of all slices with 
yield good results. It is shown that this is in good agreement with theory.
and resistivity ρ are examined. It is shown that the quality cannot be linked to the thickness or resistivity alone, but is closely connected with the ratio of thickness to resistivity. Ninety-five percent of all slices with yield good results. It is shown that this is in good agreement with theory.Keywords
Alloying; Conductivity; Diodes; Electromagnetic heating; Epitaxial layers; Gallium arsenide; Gunn devices; Microwave devices; Substrates; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.16000
Filename
1474723
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