DocumentCode :
1028829
Title :
The selection of GaAs epitaxial layers for CW X-band Gunn diodes
Author :
Hilsum, Cyril ; Morgan, John R.
Author_Institution :
Royal Research Establishment, Malvern, Worcester, England
Volume :
14
Issue :
9
fYear :
1967
fDate :
9/1/1967 12:00:00 AM
Firstpage :
532
Lastpage :
534
Abstract :
Results are reported on 1000 diodes made from about 50 GaAs epitaxial layers. The layers are classified for quality according to the power output of the average device, and the correlation between quality and epitaxial layer thickness 
and resistivity ρ are examined. It is shown that the quality cannot be linked to the thickness or resistivity alone, but is closely connected with the ratio of thickness to resistivity. Ninety-five percent of all slices with 
yield good results. It is shown that this is in good agreement with theory.
and resistivity ρ are examined. It is shown that the quality cannot be linked to the thickness or resistivity alone, but is closely connected with the ratio of thickness to resistivity. Ninety-five percent of all slices with yield good results. It is shown that this is in good agreement with theory.Keywords :
Alloying; Conductivity; Diodes; Electromagnetic heating; Epitaxial layers; Gallium arsenide; Gunn devices; Microwave devices; Substrates; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.16000
Filename :
1474723
Link To Document :
