Title :
Entirely VPE-grown 1-5μm DFB lasers with low threshold currents
Author :
Nishibe, T. ; Funamizu, M. ; Okuda, H. ; Furuyama, H. ; Hirayama, Y. ; Nakamura, M. ; Iwamoto, M.
Author_Institution :
Toshiba Corporation, Research & Development Center, Kawasaki, Japan
Abstract :
Entirely hydride VPE-grown 1.5μm DFB lasers have been obtained by means of high controllability in film thickness and alloy composition for the GalnAsP/InP system. A low threshold current of 13 mA was achieved by improving the growth method for the layer burying the grating. High uniformity in threshold current and lasing wavelength (Ith = 27.3 ± 9.7 mA, λ = 15571 ± 12Ã…) was obtained.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 13 mA; 15571 Ã\x85; DFB lasers; GaInAsP-InP; GaInAsP/InP system; growth method; hydride VPE-grown; lasing wavelength; low threshold currents; semiconductors; uniformity in threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870025
