DocumentCode
1028866
Title
InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy
Author
Dental, A.G. ; Campbell, J.C. ; Joyner, C.H. ; Qua, G.J.
Author_Institution
AT&T Bell Laboratories, Crowford Hill Laboratory, Holmdel, USA
Volume
23
Issue
1
fYear
1987
Firstpage
38
Lastpage
39
Abstract
We have fabricated and characterised high-efficiency, long-wavelength PIN photodiodes on In0.53Ga0.47As/InP/GaAs wafers grown by metal organic vapour phase epitaxy. Initial measurements indicate that good quality devices can be made in this highly stressed material system (lattice mismatch ~3.8%). These results suggest the possibility of fabricating optoelectronic integrated circuits (OEICs) by combining InGaAs(P) electro-optic devices with high-speed GaAs electronics.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; vapour phase epitaxial growth; GaAs; GaAs substrates; InGaAs PIN photodiodes; InGaAs-InP-GaAs wafers; InGaAsP; MOVPE; OEICs; electrooptic devices; good quality devices; high-efficiency; high-speed GaAs electronics; highly stressed material system; lattice mismatch; long-wavelength PIN photodiodes; metal organic vapour phase epitaxy; optoelectronic integrated circuits; p-i-n photodiodes; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870028
Filename
4257231
Link To Document