• DocumentCode
    1028874
  • Title

    Soi by wafer bonding with spin-on glass as adhesive

  • Author

    Yamada, Akimasa ; Kawasaki, T. ; Kawashima, Mitsumasa

  • Author_Institution
    Sumitomo Metal Mining Co. Ltd., Electronics Materials Laboratory, Tokyo, Japan
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    39
  • Lastpage
    40
  • Abstract
    Two silicon wafers were bonded together with spin-on glass as the adhesive. Bonding strength depended heavily on the surface treatment. This was also confirmed by IR reflection measurement. A silicon-on-insulator (SOI) structure was achieved by thinning one of the wafers after the bonding. The resultant 5¿m-thick SOI layer was stable at high temperatures and showed no degradation in its electrical characteristics.
  • Keywords
    semiconductor technology; IR reflection measurement; SOG; SOI by wafer bonding; SOI layer; Si on insulator; electrical characteristics; silicon-on-insulator; spin-on glass as adhesive; stable at high temperatures; surface treatment; wafer thinning;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870029
  • Filename
    4257233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028874