DocumentCode
1028881
Title
Bi-substituted garnet films crystallized during RF sputtering for M-O memory
Author
Gomi, X. ; Okazaki, T. ; Abe, M. ; Gomi, Manabu ; Okazaki, Tadatsugi ; Abe, Makoto
Author_Institution
Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Volume
23
Issue
5
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
2967
Lastpage
2969
Abstract
We have successfully got Bi-substituted garnet films on glass substrates by in situ sputter growth above 500°C. When sputter-crystallized just above 500°C, the films had a good surface smoothness and a high crystallographic quality as compared to the post-annealed Film. The films had a preferred crystal orientation of
Keywords
Magnetooptic memories; Argon; Bismuth; Crystallization; Garnet films; Optical films; Optical microscopy; Radio frequency; Solids; Sputtering; Temperature;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065444
Filename
1065444
Link To Document