• DocumentCode
    1028881
  • Title

    Bi-substituted garnet films crystallized during RF sputtering for M-O memory

  • Author

    Gomi, X. ; Okazaki, T. ; Abe, M. ; Gomi, Manabu ; Okazaki, Tadatsugi ; Abe, Makoto

  • Author_Institution
    Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • fDate
    9/1/1987 12:00:00 AM
  • Firstpage
    2967
  • Lastpage
    2969
  • Abstract
    We have successfully got Bi-substituted garnet films on glass substrates by in situ sputter growth above 500°C. When sputter-crystallized just above 500°C, the films had a good surface smoothness and a high crystallographic quality as compared to the post-annealed Film. The films had a preferred crystal orientation of
  • Keywords
    Magnetooptic memories; Argon; Bismuth; Crystallization; Garnet films; Optical films; Optical microscopy; Radio frequency; Solids; Sputtering; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1987.1065444
  • Filename
    1065444