DocumentCode :
1028881
Title :
Bi-substituted garnet films crystallized during RF sputtering for M-O memory
Author :
Gomi, X. ; Okazaki, T. ; Abe, M. ; Gomi, Manabu ; Okazaki, Tadatsugi ; Abe, Makoto
Author_Institution :
Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2967
Lastpage :
2969
Abstract :
We have successfully got Bi-substituted garnet films on glass substrates by in situ sputter growth above 500°C. When sputter-crystallized just above 500°C, the films had a good surface smoothness and a high crystallographic quality as compared to the post-annealed Film. The films had a preferred crystal orientation of
Keywords :
Magnetooptic memories; Argon; Bismuth; Crystallization; Garnet films; Optical films; Optical microscopy; Radio frequency; Solids; Sputtering; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065444
Filename :
1065444
Link To Document :
بازگشت