Accurate simulation of GaAs MESFET´s intermodulation distortion using a new drain-source current model

Author

Pedro, José Carlos ; Perez, Jorge

Author_Institution

Dept. de Electron. e Telecoms, Aveiro Univ., Portugal

Volume

42

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

25

Lastpage

33

Abstract

An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET, does not allow the common approach of splitting this nonlinear equivalent circuit element in two voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to extract the cross terms of the Ids(Vgs,Vds) Taylor series expansion. Measurements and Volterra series simulations, made at 2 GHz, have shown that they can give an important contribution to the prediction and understanding of MESFET´s intermodulation load-pull behavior

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric distortion; equivalent circuits; gallium arsenide; intermodulation; microwave measurement; semiconductor device models; semiconductor device testing; simulation; solid-state microwave devices; 2 GHz; GaAs; GaAs MESFET; IMD; Taylor series expansion; Volterra series; drain current; drain-source current model; intermodulation distortion; intermodulation load-pull behavior; laboratory characterization procedure; nonlinear distortion; simulation; Circuit simulation; Equivalent circuits; Gallium arsenide; Intermodulation distortion; Laboratories; MESFET circuits; Nonlinear distortion; Predictive models; Taylor series; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.265524

Filename

265524