Title :
Electrical performance of GaAs epitaxial Gunn effect oscillators
Author :
Murakami, H. ; Sekido, Keiko
fDate :
9/1/1967 12:00:00 AM
Abstract :
CW performance of GaAs epitaxial Gunn effect oscillators in the 3.5 to 53 GHz range is described. The n++-n-n+structure was prepared by means of vapor-phase and liquid-phase epitaxy. The maximum CW output power was 340 mW at 7.7 GHz and 7 mW at 53 GHz, respectively. Results of FM noise measurement at 10 GHz and at 50 GHz are also presented.
Keywords :
Diodes; Epitaxial growth; Frequency measurement; Gallium arsenide; Gunn devices; Klystrons; Local oscillators; Microwave oscillators; Noise measurement; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16015
