• DocumentCode
    1028985
  • Title

    Two-port microwave amplification in long samples of gallium arsenide

  • Author

    Robson, P.N. ; Kino, G.S. ; Fay, B.

  • Volume
    14
  • Issue
    9
  • fYear
    1967
  • fDate
    9/1/1967 12:00:00 AM
  • Firstpage
    612
  • Lastpage
    615
  • Abstract
    Experiments on a new type of two-port, unilateral traveling-wave amplifier using subcritically doped GaAs specimens several space-charge wavelengths long are described. Net terminal gains of 2-4 dB are reported in the frequency range 700-1500 MHz. The gain is presently limited by inefficient coupling to the space-charge wave; the measured variation of phase delay between input and output terminals as a function of bias voltage is in good accord with theory, however.
  • Keywords
    Diodes; Frequency; Gain; Gallium arsenide; Gunn devices; Klystrons; Local oscillators; Power generation; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.16016
  • Filename
    1474739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028985