Title :
A Subthreshold Low-Noise Amplifier Optimized for Ultra-Low-Power Applications in the ISM Band
Author :
Do, Aaron V. ; Boon, Chirn Chye ; Do, Manh Anh ; Yeo, Kiat Seng ; Cabuk, Alper
Author_Institution :
Nanyang Technol. Univ., Nanyang
Abstract :
The IEEE 802.15.4 standard relaxes the requirements on the receiver front-end making subthreshold operation a viable solution. The specification is discussed and guidelines are presented for a small area ultra-low-power design. A subthreshold biased low-noise amplifier (LNA) has been designed and fabricated for the 2.4-GHz IEEE 802.15.4 standard using a standard low-cost 0.18-mum RF CMOS process. The single-stage LNA saves on chip area by using only one inductor. The measured gain is more than 20 dB with an S11 of -19 dB while using 630 muA of dc current. The measured noise figure is 5.2 dB.
Keywords :
CMOS analogue integrated circuits; IEEE standards; UHF integrated circuits; UHF power amplifiers; inductors; low noise amplifiers; low-power electronics; radio receivers; IEEE 802.15.4 standard; ISM band; LNA design; current 630 muA; frequency 2.4 GHz; gain measurement; inductor; noise figure; noise figure 5.2 dB; receiver front-end making subthreshold operation; single-stage LNA; size 0.18 mum; standard low-cost RF CMOS process; subthreshold low-noise amplifier optimization; ultra-low-power applications; CMOS process; Current measurement; Gain measurement; Guidelines; Inductors; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Semiconductor device measurement; Front-end; low power; low-noise amplifier (LNA); subthreshold;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2007.913366
