Title :
A floating gate and its application to memory devices
fDate :
9/1/1967 12:00:00 AM
Keywords :
Charge carrier processes; Diodes; Electron traps; Epitaxial layers; Gallium arsenide; Gunn devices; Laboratories; Microwave oscillators; Nonvolatile memory; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16028
