Title :
Properties of GaAs grown by the liquid epitaxial technique and its application to CW Gunn oscillators
Author :
Kang, C.S. ; Greene, P.E. ; Atalla, Mahmoud
fDate :
9/1/1967 12:00:00 AM
Keywords :
Anodes; Charge carrier processes; Diodes; Electron traps; Epitaxial layers; Gallium arsenide; Gunn devices; Ionization; Microwave oscillators; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16029
