DocumentCode

1029136

Title

Properties of GaAs grown by the liquid epitaxial technique and its application to CW Gunn oscillators

Author

Kang, C.S. ; Greene, P.E. ; Atalla, Mahmoud

Volume

14

Issue

9

fYear

1967

fDate

9/1/1967 12:00:00 AM

Firstpage

629

Lastpage

629

Keywords

Anodes; Charge carrier processes; Diodes; Electron traps; Epitaxial layers; Gallium arsenide; Gunn devices; Ionization; Microwave oscillators; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1967.16029

Filename

1474752