Title :
Very high-transconductance heterojunction field-effect transistor (HFET)
Author :
Taylor, Graham W. ; Lebby, M.S. ; Chang, T.Y. ; Gnall, R.N. ; Sauer, N. ; Tell, B. ; Simmons, Jay G.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
A new form of FET has been demonstrated in the GaAs/AlGaAs material system. Designated the HFET, it has shown a transconductance of 500mS/mm at 300K for a nominal Lg =2¿m and a drain current of 430mA/mm. The conduction occurs in an inversion channel at the heterointerface.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor technology; 2 micron; 300 K; GaAs-AlGaAs; HFET; drain current; heterojunction field-effect transistor; high-transconductance; inversion channel; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870056
