Title :
Epitaxial gallium arsenide for Gunn-effect oscillators
Author :
Wolfe, C.M. ; Foyt, A.G. ; Lindley, W.T.
fDate :
9/1/1967 12:00:00 AM
Keywords :
Charge carrier processes; Diodes; Electron traps; Epitaxial layers; Gallium arsenide; Gunn devices; Ionization; Laboratories; Microwave oscillators; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16034
