• DocumentCode
    1029178
  • Title

    Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs

  • Author

    Canali, Carlo ; Donzelli, G. ; Fantini, F. ; Vanzi, M. ; Paccagnella, Alessandro

  • Author_Institution
    UniversitÃ\xa0 di Padova, Istituto di Elettrotecnica e di Elettronica, Padova, Italy
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; failure analysis; gallium arsenide; gold; metallisation; power transistors; semiconductor-metal boundaries; Au-GaAs interaction; Au-Ti-GaAs metallisation; Ti diffusion barriers; border effects; failure mechanisms; gate contact degradation; gate-sinking; local inhomogeneities; power MESFETs; thermal gradients;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870060
  • Filename
    4257316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029178