Title :
Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs
Author :
Canali, Carlo ; Donzelli, G. ; Fantini, F. ; Vanzi, M. ; Paccagnella, Alessandro
Author_Institution :
UniversitÃ\xa0 di Padova, Istituto di Elettrotecnica e di Elettronica, Padova, Italy
Abstract :
Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; failure analysis; gallium arsenide; gold; metallisation; power transistors; semiconductor-metal boundaries; Au-GaAs interaction; Au-Ti-GaAs metallisation; Ti diffusion barriers; border effects; failure mechanisms; gate contact degradation; gate-sinking; local inhomogeneities; power MESFETs; thermal gradients;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870060
