Title :
Aging characteristics of AlGaInP/GaInP visible-light lasers (λL = 678 nm)
Author :
Gomyo, A. ; Kobayashi, K. ; Kawata, S. ; Hino, I. ; Suzuki, T.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
An aging test for AlGaInP/GaInP visible-light lasers (λL = 678 nm) with 3-5 mW lasing output power was carried out for over 2000 h at room temperature. Significant degradation has not been observed during this test. The results indicate that the AlGaInP laser diodes have a considerable lifetime, suitable for practical use.
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium compounds; indium compounds; life testing; semiconductor junction lasers; 2000 h; 3 to 5 mW; 678 nm; AlGaInP laser diodes; AlGaInP-GaInP lasers; DH lasers; aging test; lifetime; output power; room temperature; semiconductors; visible-light lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870061
