• DocumentCode
    1029222
  • Title

    Tailoring the I/V characteristics of a superlattice tunnel diode

  • Author

    Davies, R.A. ; Kelly, Michael J. ; Kerr, T.M.

  • Author_Institution
    GEC Research Ltd., Hirst Research Centre, Wembley, UK
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • Firstpage
    90
  • Lastpage
    92
  • Abstract
    We demonstrate the exploitation of the precise growth control afforded by molecular beam epitaxy (MBE) to realise the design of a superlattice tunnel diode with a large negative differential resistance (NDR) feature (peak-to-valley ratio of 2.5:1) at room temperature.
  • Keywords
    molecular beam epitaxial growth; semiconductor growth; tunnel diodes; I/V characteristics; MBE; NDR; large negative differential resistance; molecular beam epitaxy; peak-to-valley ratio; precise growth control; room temperature; superlattice tunnel diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870065
  • Filename
    4257328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029222