Title :
Tailoring the I/V characteristics of a superlattice tunnel diode
Author :
Davies, R.A. ; Kelly, Michael J. ; Kerr, T.M.
Author_Institution :
GEC Research Ltd., Hirst Research Centre, Wembley, UK
Abstract :
We demonstrate the exploitation of the precise growth control afforded by molecular beam epitaxy (MBE) to realise the design of a superlattice tunnel diode with a large negative differential resistance (NDR) feature (peak-to-valley ratio of 2.5:1) at room temperature.
Keywords :
molecular beam epitaxial growth; semiconductor growth; tunnel diodes; I/V characteristics; MBE; NDR; large negative differential resistance; molecular beam epitaxy; peak-to-valley ratio; precise growth control; room temperature; superlattice tunnel diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870065
