Title :
Theory of avalanche breakdown in InSb and InAs
fDate :
9/1/1967 12:00:00 AM
Keywords :
Avalanche breakdown; Charge carriers; Circuits; Delay; Impurities; Ionization; Oscillators; P-i-n diodes; Telephony; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16055
