Title :
Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material
Author :
Ezis, A. ; Rai, A.K. ; Langer, D.W.
Author_Institution :
Universal Energy Systems Inc., Dayton, USA
Abstract :
Cross-sectional transmission electron microscopy is used to determine the structure of Au-, Ge- and Ni-based ohmic contacts at the interface with AlGaAs/GaAs modulation-doped field-effect-transistor material. Significant lateral diffusion (¿0.12¿m) is found to occur at the edge of the contact during alloying. The observed contact structure places a limit on minimum geometries and must be taken into account if accurate device modelling is to be carried out.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; ohmic contacts; transmission electron microscope examination of materials; AlGaAs-GaAs; MODFET; Ohmic contacts; contact structure; device modelling; lateral diffusion; modulation-doped field-effect-transistor; transmission electron microscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870080
