Title :
An InP-Based Quantum-Dot Tunable Three-Section Distributed Bragg Reflector Laser
Author :
Robbins, D.J. ; Duck, J.P. ; Whitbread, N.D. ; Ward, A.J. ; Rousseau, B. ; Lelarge, F.
Author_Institution :
Bookham Technol. PLC, Towcester
Abstract :
A three-section distributed Bragg reflector (DBR) laser operating in the 1550-nm band is reported, based on a quantum-dot gain medium. The device is fabricated using a standard production, full wafer process to achieve a valid comparison with quantum-well-based DBR lasers. A tuning range of 8 nm and a maximum output power of 20 mW are achieved.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; indium compounds; laser beams; laser tuning; quantum well lasers; semiconductor quantum dots; InP; device fabrication; full wafer process; power 20 mW; quantum dot tunable DBR laser; quantum-dot gain medium; quantum-well-based DBR lasers; three-section distributed Bragg reflector laser; wavelength 1550 nm; Distributed Bragg reflectors; Epitaxial growth; Laser tuning; Optical design; Production; Quantum dot lasers; Quantum dots; Semiconductor lasers; Surface emitting lasers; Tunable circuits and devices; Laser tuning; quantum dots (QDs); semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.912520
