Title :
Measuring modulus and phase of chirp/modulated power ratio
Author_Institution :
Ecole Nationale Supérieure des Télécommunications, Département Télécommunications, Paris, France
Abstract :
A simple analytic method of extracting both the modulus and phase of the CPR from the asymmetric modulated intensity spectrum has been applied to a GaAlAs channelled-substrate-planar (CSP) laser. Knowledge of the phase is extremely useful for modelling laser dynamics. In particular, our results show a marked phase shift which appears consistent with a nonuniform lateral carrier distribution in the CSP laser.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; semiconductor junction lasers; GaAlAs; III-V semiconductors; asymmetric modulated intensity spectrum; channelled-substrate-planar; chirp/modulated power ratio; laser dynamics; nonuniform lateral carrier distribution; phase shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870094
