• DocumentCode
    1029516
  • Title

    Development of gate-lag effect on GaAs power MESFETs during aging

  • Author

    Dumas, J.-M. ; Garat, F. ; Lecrosnier, D.

  • Author_Institution
    Centre National d´ Etudes des Télécommunications, Lannion, France
  • Volume
    23
  • Issue
    4
  • fYear
    1987
  • Firstpage
    139
  • Lastpage
    141
  • Abstract
    We have observed a gradual degradation of the output power not accompanied by drifts in the classical basic static parameters of a GaAs power MESFET. We report in the letter that this phenomenon can be explained by the development, during aging, of the gate-lag effect.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; ageing; gallium arsenide; power transistors; reliability; semiconductor device testing; GaAs; aging; degradation; gate-lag effect; output power; power MESFET; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870098
  • Filename
    4257378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029516