Title :
Development of gate-lag effect on GaAs power MESFETs during aging
Author :
Dumas, J.-M. ; Garat, F. ; Lecrosnier, D.
Author_Institution :
Centre National d´ Etudes des Télécommunications, Lannion, France
Abstract :
We have observed a gradual degradation of the output power not accompanied by drifts in the classical basic static parameters of a GaAs power MESFET. We report in the letter that this phenomenon can be explained by the development, during aging, of the gate-lag effect.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; ageing; gallium arsenide; power transistors; reliability; semiconductor device testing; GaAs; aging; degradation; gate-lag effect; output power; power MESFET; reliability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870098
