Title :
CMOS/SIMOX devices having a radiation hardness of 2 Mrad(Si)
Author :
Ohno, Tetsufumi ; Izumi, Kiyotaka ; Shimaya, M. ; Shiono, N.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
Radiation-hardened CMOS/SIMOX devices have been produced by combining SIMOX with a newly developed lateral isolation structure. Even after exposure of these devices up to 2 Mrad(Si) of gamma-ray irradiation, they exhibit sufficient operational characteristics.
Keywords :
CMOS integrated circuits; gamma-ray effects; insulated gate field effect transistors; integrated circuit technology; radiation hardening (electronics); 2E6 rad; CMOS/SIMOX devices; MOSFET; gamma-ray irradiation; lateral isolation structure; operational characteristics; radiation hardness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870099
