Title :
Deep impurity band effects on transient behavior of GaAs p-i-n devices
fDate :
9/1/1967 12:00:00 AM
Keywords :
Capacitance; Frequency; Gallium arsenide; Impurities; Optical modulation; Optical waveguides; P-i-n diodes; PIN photodiodes; Phase modulation; Waveguide junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16072
