Title :
Measured dependence of lifetime upon local defect density and temperature in depletion layers of epitaxial silicon diodes
Author :
Scharfetter, D.L. ; Johnston, Roy L.
fDate :
9/1/1967 12:00:00 AM
Keywords :
Cadmium; Current density; Current measurement; Density measurement; Diodes; Position measurement; Rectifiers; Silicon; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16074
