DocumentCode :
1029700
Title :
Observations of room-temperature excitons in InGaP/InGaAlP MQW structures
Author :
Tanaka, Hiroya ; Kawamura, Yuriko ; Asahi, H.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Volume :
23
Issue :
4
fYear :
1987
Firstpage :
166
Lastpage :
168
Abstract :
Room-temperature excitonic resonances in the optical absorption spectrum of InGaP/lnGaAlP multiquantum wells (MQWs) are observed for the first time. Well resolved heavyhole and light-hole excitons are observed at 100K. From the step-like structure of the absorption spectrum, the conduction-band discontinuity ¿Ec is estimated to be 0.46 of the bandgap difference ¿Eg.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor superlattices; visible and ultraviolet spectra of inorganic solids; III-V semiconductor; InGaP-InGaAlP multiple quantum wells; MQW structures; bandgap difference; conduction-band discontinuity; heavy hole excitons; light-hole excitons; optical absorption spectrum; photoluminescence; room-temperature excitons; step-like structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870118
Filename :
4257398
Link To Document :
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