Abstract :
This list of references contains over 200 entries, and no claims are made as to its completeness. The references for the era 1939 through 1963 refer to field-effect transistors, in general, and were obtained mostly from J. T. Wallmark\´s article, "The Field-Effect Transistor--An Old Device with New Promise," IEEE Spectrum, vol. 1, pp. 182-191, March 1964. The subsequent references (1964 to mid-1967) relate predominantly to insulated-gate field-effect transistors, designated in the literature by IG-FETs. Often, more specific terms are used: for a structure consisting of a metal gate, insulating layer, and semiconductor substrate, the term MIS-FET appeared in the literature. If the insulating layer is an oxide, the terms MOS-FET or MOST are widely used. If the IG-FETs are fabricated by the so-called "thin-film" process, then they are called thin-film transistors, and are designated in the literature by TFTs; however, not all TFTs are FETs
