Gate-oxide integrity of silicon-on-insulator transistors

The quality of gate oxide grown on thin films of silicon obtained by implanting an oxide layer beneath the surface of a silicon water has been assessed by measuring the initial oxide breakdown strength and the time-dependent dielectric breakdown. Both the initial dielectric strength and the charge-to-breakdown are the same as for oxide grown on bulk wafers, suggesting that the high dislocation density in the silicon films does not catastrophically degrade oxide quality.