Title :
Anomalous oscillation in depletion-mode MOSFETs at low temperature
Author :
Carruthers, C. ; Mavor, J.
Author_Institution :
University of Edinburgh, Department of Electrical Engineering, Edinburgh, UK
Abstract :
Results are presented which show unusual behaviour in silicon, n-channel depletion-mode MOSFETs having phosphorus doping. At 77 K these devices exhibit a low-frequency oscillation whereby the MOSFET channel periodically turns high resistance for a short period.
Keywords :
elemental semiconductors; insulated gate field effect transistors; oscillations; phosphorus; silicon; 77 K; Si:P; depletion-mode MOSFETs; high resistance; low temperature; low-frequency oscillation; n-channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870126
