Title :
Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits
Author :
Ishii, M. ; Kamon, K. ; Shimazu, M. ; Mihara, Mitsuharu ; Kumabe, H. ; Isshiki, Kenji
Author_Institution :
Optoelectronics Joint Research Laboratory, Kawasaki, Japan
Abstract :
TJS lasers with a planar structure were fabricted by growing GaAs-AlGaAs double heterstructures in reverse-mesa-etched shapes in semi-insulting GaAs substrates. Continuous single-mode operation was achieved at temperatures up to 110°C. The minimum threshold current was 25 mA at 25°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser modes; semiconductor junction lasers; 25 mA; 25 to 110 degC; GaAs substrates; GaAs-AlGaAs double heterostructures; III-V semiconductors; continuous single mode operation; optoelectronic integrated circuits; planar structure; reverse-mesa-etched shapes; semiconductor lasers; semiinsulating type; transverse junction stripe type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870127
