Title :
DLTS study of silicon-on-insulator structures irradiated with electrons or high-energy ions
Author :
Antonova, I.V. ; Stano, J. ; Naumova, O.V. ; Skuratov, V.A. ; Popov, V.P.
Author_Institution :
Russian Acad. of Sci., Novosibirsk, Russia
fDate :
6/1/2004 12:00:00 AM
Abstract :
Results of deep-level transient spectroscopy (DLTS) study of radiation defects in silicon layers, Si/SiO2 interface traps, and a charge in buried oxide formed under irradiation with 2.0 MeV electrons (105-106 rad.) or 245 MeV Kr (2.2×108 cm-2 and 1.4×109 cm-2) ions in silicon-on-insulator (SOI) structures are presented and discussed. SOI was fabricated by the wafer bonding and hydrogen cutting. It was found that electron irradiation leads to transformation of energy spectrum of the interface traps (relaxation of the bonded interface) in SOI. The main effect of high-energy Kr ion irradiation consists in formation of radiation defects in the top silicon layer as well as in the substrate. The fixed positive charge is introduced in the buried oxide under irradiation in both cases.
Keywords :
deep level transient spectroscopy; electron beam effects; interface states; ion beam effects; silicon; silicon compounds; silicon-on-insulator; wafer bonding; DLTS study; SOI structure; Si-SiO2; Si/SiO2 interface trap formation; bonded interface relaxation; buried oxide; deep-level transient spectroscopy; electron irradiation; energy spectrum transformation; fixed positive charge; high-energy Kr ion irradiation; hydrogen cutting; radiation defect; silicon layer; silicon-on-insulator structure; substrate; top silicon layer; wafer bonding; Circuit optimization; Electron traps; Fabrication; Hydrogen; Nuclear electronics; Projectiles; Silicon on insulator technology; Spectroscopy; Temperature; Wafer bonding; Electron irradiation; SOI; high-energy ion irradiation; interface traps; radiation defects; silicon-on-insulator;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.829367
