Title :
InGaAsP carrier injection modulator integrated with DFB LD
Author :
Yamaguchi, Masaki ; Emura, Keita ; Kitamura, Masayuki ; Mito, I. ; Kobayashi, Kaoru
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Basic characteristics for InGaAsP carrier injection modulators integrated with distributed feedback laser diodies (DFB LDs) have been investigated. 450Mbit/s nonreturn-to-zero (NRZ) pulse modulation with time-averaged spectral line-width as narrow as 600 MHz has been achieved.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; optical modulation; pulse modulation; semiconductor junction lasers; spectral line breadth; 450 Mbit/s; 600 MHz; DFB lasers; III-V semiconductor; InGaAsP carrier injection modulator; NRZ pulse modulation; distributed feedback laser diodes; double channel planar buried heterostructure; integrated optoelectronics; optical communication equipment; time-averaged spectral linewidths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870134
