Title :
Static 7 GHz frequency divider IC based on a 2 ¿m Si bipolar technology
Author :
Weger, P. ; Treitinger, L. ; Reimann, R. ; Rein, H.-M.
Author_Institution :
Siemens AG, Mÿnchen, West Germany
Abstract :
A static 8:1 frequency divider IC operating at up to 7 GHz has been realised using a preproduction silicon bipolar technology with 2 ¿m lithography. This technology is characterised by a self-aligned double polysilicon emitter-base structure and oxide wall isolation. The high upper frequency limit, not yet achieved with comparable 2 ¿m technologies, was attained by careful circuit design and optimisation.
Keywords :
bipolar integrated circuits; frequency dividers; 7 GHz; Si; bipolar technology; frequency divider IC; microlithography; monolithic IC; oxide wall isolation; polycrystalline emitter-base structure; self aligned technique; static type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870135
