DocumentCode :
1029959
Title :
Reverse characteristics of Mo-Si epitaxial Schottky diodes
Author :
Kano, Gota ; Takayanagi, Shigetoshi
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume :
14
Issue :
12
fYear :
1967
fDate :
12/1/1967 12:00:00 AM
Firstpage :
822
Lastpage :
829
Abstract :
The characteristics of a metal-semiconductor Schottky barrier diode, in which the semiconductor part consists of a heavily doped substrate ( 
Ω.cm) with a thin (∼ 1 µ) epitaxial layer which is much less heavily doped (-∼ 1 Ω.cm) on top of it, were studied. The electric field distribution calculations showed that, for all practical cases, the penetration of the depletion layer into the substrate could be neglected. Expressions for the capacitance-voltage characteristics, the image force barrier lowering effects, and the avalanche breakdown voltages were derived. The expressions can be verified experimentally on Mo-Si Schottky diodes.
Ω.cm) with a thin (∼ 1 µ) epitaxial layer which is much less heavily doped (-∼ 1 Ω.cm) on top of it, were studied. The electric field distribution calculations showed that, for all practical cases, the penetration of the depletion layer into the substrate could be neglected. Expressions for the capacitance-voltage characteristics, the image force barrier lowering effects, and the avalanche breakdown voltages were derived. The expressions can be verified experimentally on Mo-Si Schottky diodes.Keywords :
Avalanche breakdown; Breakdown voltage; Capacitance-voltage characteristics; Epitaxial layers; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Thickness measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.16116
Filename :
1474839
Link To Document :
