DocumentCode
1029959
Title
Reverse characteristics of Mo-Si epitaxial Schottky diodes
Author
Kano, Gota ; Takayanagi, Shigetoshi
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
14
Issue
12
fYear
1967
fDate
12/1/1967 12:00:00 AM
Firstpage
822
Lastpage
829
Abstract
The characteristics of a metal-semiconductor Schottky barrier diode, in which the semiconductor part consists of a heavily doped substrate ( 
Ω.cm) with a thin (∼ 1 µ) epitaxial layer which is much less heavily doped (-∼ 1 Ω.cm) on top of it, were studied. The electric field distribution calculations showed that, for all practical cases, the penetration of the depletion layer into the substrate could be neglected. Expressions for the capacitance-voltage characteristics, the image force barrier lowering effects, and the avalanche breakdown voltages were derived. The expressions can be verified experimentally on Mo-Si Schottky diodes.
Ω.cm) with a thin (∼ 1 µ) epitaxial layer which is much less heavily doped (-∼ 1 Ω.cm) on top of it, were studied. The electric field distribution calculations showed that, for all practical cases, the penetration of the depletion layer into the substrate could be neglected. Expressions for the capacitance-voltage characteristics, the image force barrier lowering effects, and the avalanche breakdown voltages were derived. The expressions can be verified experimentally on Mo-Si Schottky diodes.Keywords
Avalanche breakdown; Breakdown voltage; Capacitance-voltage characteristics; Epitaxial layers; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Thickness measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.16116
Filename
1474839
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