DocumentCode :
1030290
Title :
Garnet films for Bloch line memories
Author :
Ferrand, B. ; Armand, M.F. ; Daval, J. ; Arnaud, L.
Author_Institution :
D.LETI, IRDI, Commissariat à l´´Energie Atomique, GRENOBLE Cedex, France
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
3391
Lastpage :
3392
Abstract :
Bloch Line Memory (BLM) requirements are studied. Several LPE grown garnet films compositions have been investigated in order to satisfy most of these requirements. (YSmBi)3(FeGa)5O12composition seems to be very promising for BLM studies.
Keywords :
Bloch lines; Garnet films/devices; Bismuth; Damping; Gallium; Garnet films; Magnetic confinement; Magnetic materials; Magnetization; Magnetostriction; Read-write memory; Writing;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065579
Filename :
1065579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1030290
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