Title :
Inner-stripe AlGaAs/GaAs laser diode by single-step molecular beam epitaxy
Author :
Imanaka, K. ; Imamoto, Hiroshi ; Sato, Fumiaki ; Asai, Masami ; Shimura, M.
Author_Institution :
Omron Tateisi Electronics Co., Central R&D Laboratory, Nagaokakyo, Japan
Abstract :
A novel fabrication technique for a real refractive-index-guide inner-stripe laser by a single-step crystal growth is reported. The injected current is confined in the p-type silicon-doped GaAs region on the V-shaped groove with (111)A slopes by the crystal-orientation-dependent amphoteric nature of the silicon impurity in GaAs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; AlGaAs-GaAs; GaAs:Si; III-V semiconductors; MBE; V-shaped groove; fabrication technique; inner-stripe laser; laser diode; real refractive-index-guide; semiconductor lasers; single-step molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870147
