DocumentCode
1030310
Title
Inner-stripe AlGaAs/GaAs laser diode by single-step molecular beam epitaxy
Author
Imanaka, K. ; Imamoto, Hiroshi ; Sato, Fumiaki ; Asai, Masami ; Shimura, M.
Author_Institution
Omron Tateisi Electronics Co., Central R&D Laboratory, Nagaokakyo, Japan
Volume
23
Issue
5
fYear
1987
Firstpage
209
Lastpage
210
Abstract
A novel fabrication technique for a real refractive-index-guide inner-stripe laser by a single-step crystal growth is reported. The injected current is confined in the p-type silicon-doped GaAs region on the V-shaped groove with (111)A slopes by the crystal-orientation-dependent amphoteric nature of the silicon impurity in GaAs.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; AlGaAs-GaAs; GaAs:Si; III-V semiconductors; MBE; V-shaped groove; fabrication technique; inner-stripe laser; laser diode; real refractive-index-guide; semiconductor lasers; single-step molecular beam epitaxy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870147
Filename
4257473
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