Title :
SOI MOSFET in weak inversion and weak accumulation
Author :
Balestra, F. ; Brini, J.
Author_Institution :
ENSERG/INPG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, UA-CNRS 840, Grenoble, France
Abstract :
The subthreshold current of silicon-on-insulator (SOI) MOSFETs has been investigated. The importance of the back interface (silicon film/back insulator) on the subthreshold slope factors is emphasised. On the other hand, the dependence of the slope factors on the back insulator thickness is demonstrated and a comparison of the slope factors for the case of the weak inversion and weak accumulation has been carried out.
Keywords :
insulated gate field effect transistors; semiconductor-insulator boundaries; SOI MOSFET; Si; back insulator thickness; subthreshold current; subthreshold slope factors; weak accumulation; weak inversion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870149
