DocumentCode :
1030347
Title :
On the field-effect transistor characteristics
Author :
Wedlock, B.D.
Volume :
15
Issue :
3
fYear :
1968
fDate :
3/1/1968 12:00:00 AM
Firstpage :
181
Lastpage :
182
Abstract :
A theoretical analysis demonstrates that the relationship between ID and VDS for one value of VGS is sufficient to completely describe the device behavior for any channel impurity profile. A simple graphical procedure is given to generate a complete set of characteristics from the results at one value of VGS . Measurements on an 
-channel FET are given to support the theoretical conclusion and to demonstrate the graphical technique.
-channel FET are given to support the theoretical conclusion and to demonstrate the graphical technique.Keywords :
Character generation; FETs; Geometry; Impurities; Integral equations; Marine vehicles; Mathematical analysis; Performance analysis; Poisson equations; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16157
Filename :
1475059
Link To Document :
