Title :
Improved ferroelectric field-effect devices
Author :
Mccusker, J.H. ; Perlman, S.S.
fDate :
3/1/1968 12:00:00 AM
Abstract :
Postfabrication heat treatments in dry helium are shown to produce greater than tenfold improvement in the range of adaptability of the transfer characteristics of adaptive thin-film (Te or CdSe) resistors and transistors. Improved device performance is attributed to removal of water vapor from the ferroelectric (TGS) material.
Keywords :
FETs; Ferroelectric materials; Helium; Impurities; Insulation; Materials science and technology; Semiconductor materials; Semiconductor thin films; Thin film devices; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16158
