Title :
Saturation power in GaAs amplifiers
Author :
Hayes, Richard E.
fDate :
3/1/1968 12:00:00 AM
Abstract :
The results of an experimental investigation of the saturation power level of GaAs amplifiers are reported. It is found that there is an optimum range of applied voltages and electron density-length products to achieve the maximum saturation power. The largest saturation effciency observed was 4 percent.
Keywords :
Charge carrier density; Conductivity; Contact resistance; Electrical resistance measurement; Gallium arsenide; Polarization; Power amplifiers; Surface resistance; Temperature distribution; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16159
