Title :
Broadband 1.5μm GaInAsP travelling-wave laser amplifier with high-saturation output power
Author :
Saitoh, T. ; Mukai, T.
Author_Institution :
NTT, Electrical Communications Laboratories, Musashino, Japan
Abstract :
A 1.5μm GaInAsP travelling-wave amplifier (TWA), which has a residual facet reflectivity of 0.04% is realised through the application of SiOx antireflection coatings on both facets. The TWA has wide signal gain spectra with undulation of 1.5dB within one free spectral range for a 24.5dB signal gain. The saturation output power of the 24.5dB signal gain. The saturation output power of the TWA fora 20dB signal gain is +7dBm, which is 20dB greater than that provided by the Fabry-Perot amplifier.
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; wideband amplifiers; 1.5 micron; 24.5 dB; GaInAsP; GaInAsP travelling-wave laser amplifier; SiOx antireflection coatings; TWA; high-saturation output power; optical repeaters; residual facet reflectivity of 0.04%; signal gain; signal gain spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870153
