Extremely high power 1.48 μm GaInAsP/InP GRIN-SCH strained MQW lasers

Author

Kasukawa, A. ; Namegaya, T. ; Iwai, N. ; Yamanaka, N. ; Ikegami, Y. ; Tsukiji, N.

Author_Institution

Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

6

Issue

1

fYear

1994

Firstpage

4

Lastpage

6

Abstract

A record CW output power of 360 mW at 25/spl deg/C was achieved by investigating the structure of optical confinement layer in 1.48 μm GRIN-SCH MQW lasers. It is experimentally demonstrated that the use of a wide bandgap and thin SCH layer gives a high differential quantum efficiency without expense of threshold current. Low driving currents, 195 mA for 100 mW, 450 mA for 200 mW and 890 mA for 300 mW, were obtained in the optimized cavity lengths.

Keywords

III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; laser transitions; semiconductor lasers; 1.48 micron; 100 mW; 195 mA; 200 mW; 25 degC; 300 mW; 360 mW; 450 mA; 890 mA; CW output power; GaInAsP-InP; GaInAsP/InP GRIN-SCH strained MQW lasers; extremely high power; high differential quantum efficiency; low driving currents; optical confinement layer; optimized cavity lengths; thin SCH layer; threshold current; wide bandgap; Absorption; Carrier confinement; Indium phosphide; Optical losses; Optical waveguides; Photonic band gap; Power generation; Power lasers; Quantum well devices; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265872

Filename

265872