Soft magnetic CoFeNiNbSiB amorphous film

The processes to prepare amorphous CoFeNiNbSiB soft magnetic thin films using RF sputtering have been investigated systematically. It has been found that one can obtain soft magnetic films with good qualities at low argon pressure, 4 × 10^-3torr. After annealing them in a rotating field, when the initial permeability of films can be raised above 3000 up to 10 MHz, the films show good frequency response. The structure relaxation processes of amorphous films during annealing have been studied by resistance monitoring method. It has been found that the amorphous films at high temperature experienced four obvious successive stages of relaxation.