Title :
Sensitivity improvement in low-temperature operation of a baserband photoreceiver containing a TEGFET
Author :
Ronarch, D. ; Guibert, M. ; Pophillat, L.
Author_Institution :
CNET, LAB/ROC/SFO, Lannion, France
Abstract :
By cooling to 45K a baseband photoreceiver, the front-end amplifer of which contains a TEGFET, we could improve the signal/noise ratio at the output of the system by about 4dB (optical). Considering published results on TEGFETs, we discuss further possible improvement of the photoreceiver performance.
Keywords :
electron device noise; field effect transistor circuits; high electron mobility transistors; optical communication equipment; photodetectors; preamplifiers; 45 K; HEMT; TEGFET; baseband photoreceiver; front-end amplifier; improvement; low-temperature operation; noise; optical SNR; photoreceiver performance; sensitivity improvement; signal/noise ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870156
