A corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array

Author

Fang, Z.J. ; Smith, G.M. ; Forbes, D.V. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

6

Issue

1

fYear

1994

Firstpage

10

Lastpage

12

Abstract

An InGaAs-GaAs-AlGaAs strained layer single quantum laser array with a reactive ion etched corner reflector array as its rear facet has been fabricated. The corner reflectors play a two-fold role as a highly reflective rear mirror and as a phase-locking coupler. Phase locked operation with beam widths as low as 0.64/spl deg/ are obtained at pumping currents up to 4/spl times/I/sub th/ and output powers up to 60 mW. The coupling mechanism and the benefit of the corner reflector to output performance are discussed.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; mirrors; semiconductor laser arrays; semiconductor lasers; 60 mW; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs strained layer SQW laser array; beam widths; corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array; coupling mechanism; highly reflective rear mirror; output powers; phase-locking coupler; pumping currents; reactive ion etched corner reflector array; rear facet; Etching; Optical arrays; Optical coupling; Optical resonators; Optical surface waves; Quantum well lasers; Ring lasers; Semiconductor lasers; Surface emitting lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265874

Filename

265874