Fabrication of GaAlAs/GaAs gain-coupled distributed feedback lasers using the nature of MBE

Author

Luo, Yi ; Si, Weimin ; Zhang, Shengzhong ; Chen, Di ; Wang, Jianhua

Author_Institution

Nat. Integrated Optoelectron. Lab., Tsinghua Univ., Beijing, China

Volume

6

Issue

1

fYear

1994

Firstpage

17

Lastpage

20

Abstract

Molecular beam epitaxy (MBE) regrowth on a corrugated surface is improved dramatically using a novel technique by which not only a clean surface can be obtained but also the shape of grating can be precisely controlled. A GaAlAs/GaAs multi-quantum well gain-coupled distributed feedback (DFB) laser with an absorptive grating is fabricated all by MBE for the first time. DFB mode oscillation within a range of at least 80/spl deg/C is achieved. Stable single longitudinal mode oscillation is maintained up to 20 mW.<>

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; laser modes; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 20 mW; DFB mode oscillation; GaAlAs-GaAs; GaAlAs/GaAs gain-coupled distributed feedback lasers; MBE; Stable single longitudinal mode oscillation; absorptive grating; clean surface; corrugated surface; fabrication; grating shape; molecular beam epitaxy regrowth; multi-quantum well gain-coupled DFB laser; Corrugated surfaces; Distributed feedback devices; Gallium arsenide; Gratings; Laser feedback; Laser modes; Molecular beam epitaxial growth; Optical device fabrication; Shape control; Surface cleaning;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265876

Filename

265876