Title :
High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency
Author :
Curtins, H. ; Wyrsch, N. ; Shah, A.V.
Author_Institution :
Institute de Microtechnique, Neuchatel, Switzerland
Abstract :
The effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated. A large increase in the deposition rate up to 21 Ã…/s is observed in the range between 25 and 150 MHz. Optical and electrical film parameters remain practically unchanged over this frequency range.
Keywords :
amorphous semiconductors; chemical vapour deposition; elemental semiconductors; semiconductor growth; silicon; 25 to 150 MHz; PECVD; SinH2n+2 glow discharge; amorphous Si:H; deposition rate; effect of plasma excitation frequency; electrical film parameters; high rate deposition; optical film parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870160
