• DocumentCode
    1030439
  • Title

    High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency

  • Author

    Curtins, H. ; Wyrsch, N. ; Shah, A.V.

  • Author_Institution
    Institute de Microtechnique, Neuchatel, Switzerland
  • Volume
    23
  • Issue
    5
  • fYear
    1987
  • Firstpage
    228
  • Lastpage
    230
  • Abstract
    The effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated. A large increase in the deposition rate up to 21 Ã…/s is observed in the range between 25 and 150 MHz. Optical and electrical film parameters remain practically unchanged over this frequency range.
  • Keywords
    amorphous semiconductors; chemical vapour deposition; elemental semiconductors; semiconductor growth; silicon; 25 to 150 MHz; PECVD; SinH2n+2 glow discharge; amorphous Si:H; deposition rate; effect of plasma excitation frequency; electrical film parameters; high rate deposition; optical film parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870160
  • Filename
    4257486
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1030439