17.3% peak wall plug efficiency vertical-cavity surface-emitting lasers using lower barrier mirrors

Author

Peters, M.G. ; Young, D.B. ; Peters, F.H. ; Scott, J.W. ; Thibeault, B.J. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

6

Issue

1

fYear

1994

Firstpage

31

Lastpage

33

Abstract

Modifications to the epitaxial growth of vertical-cavity surface-emitting laser (VCSEL) material have recently led to improved characteristics. By offsetting the quantum-well gain peak from the cavity mode, and implementing lower barrier p-type Al/sub 0.67/Ga/sub 0.33/As/GaAs DBR mirrors with parabolic interface gradings, better high-temperature operation and lower voltages have been achieved. These effects combine to yield a peak wall plug efficiency of 17.3% for room temperature, CW operation.<>

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; mirrors; semiconductor lasers; 17.3 percent; Al/sub 0.67/Ga/sub 0.33/As-GaAs; VCSEL; cavity mode; epitaxial growth; high-temperature operation; lower barrier mirrors; lower voltages; p-type Al/sub 0.67/Ga/sub 0.33/As/GaAs DBR mirrors; parabolic interface gradings; peak wall plug efficiency; quantum-well gain peak; room temperature CW operation; vertical-cavity surface-emitting lasers; Distributed Bragg reflectors; Epitaxial growth; Gallium arsenide; Laser modes; Mirrors; Optical materials; Plugs; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.265880

Filename

265880