Title :
Optically strobed sample-and-hold circuit
Author_Institution :
Lawrence Livermore National Laboratory, Livermore, USA
Abstract :
An integrated GaAs sample-and-hold circuit that utilises laser bean strobing of a radiation-damaged photoconductor as a sampling element and a MESFET amplifier for storage is described. The circuit has been used to measure single samples on a 75 ps electrical step.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; sample and hold circuits; 75 ps; GaAs; MESFET amplifier; integrated GaAs sample-and-hold circuit; laser beam strobing; optically strobed sample and hold circuit; radiation-damaged photoconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870165
