Title :
Reliability studies of gain-guided 0.85 μm GaAs/AlGaAs quantum well surface emitting lasers
Author :
Wu, C.C. ; Tai, K. ; Huang, T.C. ; Huang, K.F.
Author_Institution :
Inst. of Electro-Opt. Eng., Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A reliability study of gain-guided 0.85 μm GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; reliability; semiconductor lasers; 0.85 micron; 15 mA; 2000 to 3000 hr; 25 degC; 50 degC; GaAs-AlGaAs; bias currents; degradation; gain-guided GaAs/AlGaAs quantum well surface emitting lasers; power outputs; reliability; threshold values; Degradation; Distributed Bragg reflectors; Gallium arsenide; Molecular beam epitaxial growth; Optical surface waves; Power lasers; Protons; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
