Title :
Low-loss ridge optical waveguides in quarternary InGaAlAs/InP grown by MBE
Author :
Cinguino, P. ; Genova, F. ; Morasca, Sandro ; Rigo, C. ; Stano, A.
Author_Institution :
CSELT¿Centro Studi e Laboratori Telecomunicazioni, Torino, Italy
Abstract :
Low-loss waveguiding at 1.55 ¿m wavelenght in quarternary InGaAlAs grown on InP by molecular-beam epitaxy is demonstrated for the first time. Ridge waveguides with length up to 1.8 cm width between 1.3 and 50 ¿m have losses as low as 2.2dB/cm, showing the potential of this materials systems for high-performance waveguide devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical waveguides; 1.55 micron; 1.8 cm; In GaAlAs-InP; InP; MBE; high-performance waveguide devices; low loss optical waveguides; molecular-beam epitaxy; ridge optical waveguides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870166
